Performance Optimization of Germanium-Graphene Heterojunction Tunnel Field Effect Transistor using Dual Metal Strip

Sushroot; Syed Hasan Saeed; Vedvrat; Shrish Bajpai

doi:10.54392/irjmt25311

Authors

Sushroot Department of Electronics & Communication Engineering, Integral University, Lucknow, Uttar Pradesh, India Author
Syed Hasan Saeed Department of Electronics & Communication Engineering, Integral University, Lucknow, Uttar Pradesh, India Author
Vedvrat Department of Electronics & Communication Engineering, Pranveer Singh Institute of Technology, Kanpur, Uttar Pradesh, India Author https://orcid.org/0009-0002-9023-1699
Shrish Bajpai Department of Electronics & Communication Engineering, Integral University, Lucknow, Uttar Pradesh, India Author

DOI:

https://doi.org/10.54392/irjmt25311

Keywords:

Graphene, Hetero Structure, Dual Metal Strip, Hetero Dielectric, Current Ratio

Abstract

This work presents and investigates a Dual Metal Gate Graphene Nanoribbon (DMHGNR) with a Germanium heterojunction-based Tunnel Field-Effect Transistor (DMHGNRTFET). The impact of a dual metal strip combined with a hetero-dielectric on the heterojunction TFET architecture is analyzed. Optimization of the ON/OFF current and their ratio is achieved by the use of design engineering, bandgap engineering, and work function engineering. Simulations are carried out to evaluate the proposed DMHGNRTFET together with GNRGeTFET and GNRSiTFET by examining surface potential, energy band diagrams, carrier concentration, electric field distribution, I_d-V_gs characteristics, and transconductance. The DMHGNRTFET exhibits an I_on/I_off ratio of approximately ̴10¹², alongside a minimal subthreshold swing (SS) of 33.9 mV/decade. It features the lowest threshold voltage observed at 0.41 V and achieves a maximum I_on of 2.44 × 10⁻⁴ A/μm. The findings of SILVACO TCAD simulations suggest the potential for enhanced performance in low power applications of the DMHGNRTFET.

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